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| Datasheet File OCR Text: |
| NTE916 Integrated Circuit High Current, NPN Transistor Array, Common Emitter Description: The NTE916 is a high current transistor array in a 16-Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common-emitter configuration designed for directly driving seven-segment displays and light-emitting diodes (LED) displays. This device is also well suited for a variety of other drive applications including relay control and thyristor firing. Features: D Seven Transistors Permit a Wide Range of Applications D High Collector Current: IC = 100mA Max D Low Collector-Emitter Saturation Voltage: VCE(sat) = 400mV Typ @ 50mA Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (Total Package), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Per Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate Linearly Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265C The Following Ratings Apply for Each Transistor in the Device Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Note 1. The collector of each transistor of the NTE916 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative that any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (Pin5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Substrate Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Transfer Ratio Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Symbol Test Conditions Min 20 20 16 5.0 30 40 - - - - - Typ 60 60 24 6.9 68 70 0.87 0.27 0.4 - - Max - - - - - - 1.0 0.5 0.7 10 1 V V V A A Unit V V V V V(BR)CES IC = 500A, IE = 0 V(BR)CIO ICI = 500A, IE = 0, IB = 0 V(BR)CEO IC = 1mA, IB = 0 V(BR)EBO IC = 500A hFE VBE(sat) VCE = 500mV, IC = 30mA VCE = 800mV, IC = 50mA IC = 30mA, IB = 1mA IC = 50mA, IB = 5mA ICEO ICBO VCE = 10V, IB = 0 VCB = 10V, IE = 0 VCE(sat) IC = 30mA, IB = 1mA Pin Connection Diagram Collector Q1 1 Collector Q2 2 Base Q2 3 Collector Q5 4 Substrate 5 Base Q5 6 Collector Q7 7 Base Q7 8 16 Base Q1 15 Common Emitter 14 Collector Q3 13 Base Q3 12 Collector Q4 11 Base Q4 10 Base Q6 9 Collector Q6 16 9 .260 (6.6) Max 1 8 .785 (19.9) Max .200 (5.08) Max .245 (6.22) Min .100 (2.54) .700 (17.7) .300 (7.62) |
Price & Availability of NTE916
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